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| Semiconductor STK7002 N-Channel Enhancement-Mode MOSFET Description * High speed switching application. Features * High density cell design for low RDS(ON). * Voltage controlled small signal switch * High saturation current capability. Ordering Information Type NO. STK7002 Marking K702 Package Code SOT-23 Outline Dimensions unit : mm 2.40.1 1.300.1 1 1.90 Typ. 2.90.1 3 0.4 Typ. 0.2 Min. 2 1.12 Max. 0~0.1 0.38 PIN Connections 1. Gate 2. Source 3. Drain KST-2105-003 0.124 -0.03 +0.05 1 STK7002 Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage Maximum Drain current Pulsed Drain Current Power dissipation Maximum Junction-to-Ambient Operating Junction and Storage temperature range (Ta=25 C) Symbol VDSS VGS ID IDM PD RthJA T J , T stg Ratings 60 20 115 800 200 625 -55~150 Unit V V mA mA mW C/W C Electrical Characteristics Characteristic Drian-Source breakdown voltage Gate-Threshold voltage Zero Gate voltage drain current Gate-body leakage On-state drain current (Ta=25 C) Symbol BVDSS VGS(t h) IDSS IGSS ID(on) Test Condition ID =10A, VGS =0 ID =0.25mA, VDS =V GS VDS =60V, V GS =0 VDS =0V, VGS =20V VDS =7.5V, VGS =10V VGS =5V, ID =0.05A Tc=125E VGS =10V, I D =0.5A Tc=125E VDS =10V, I D =0.2A VDS =25V, V GS =0, f=1MHz Min. 60 1 500 - Typ. 2.0 1000 3.2 5.8 Max. 2.5 1 100 7.5 13.5 7.5 13.5 50 25 5 20 20 Unit V V A nA mA Drain-Source on-resistance RDS(ON) 80 - 2.4 4.4 22 11 2 7 11 Forward transconductance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time g fs C iss C oss C rss tON tOFF mS pF VDD=30V, ID =0.2A VGEN =10V, RG =25 - ns ns KST-2105-003 2 STK7002 Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS Fig. 3 rDS(on) - ID Fig. 4 C - VD S Fig. 5 VGS - Qg Fig. 6 rDS(on) - TJ KST-2105-003 3 STK7002 Fig. 7 rDS(on) - VGS Fig. 8 IS - V SD Fig. 9 VGS( th) - TJ KST-2105-003 4 |
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